TITLE:
The Effect of Doped Indium on the Electrical and Optical Properties of (Se0.7Te0.3)1−xInx Thin Films
AUTHORS:
Muhaj Talib Abdullah, Alan S. Said Ahmad, Ari A. Mohammed
KEYWORDS:
Selenium, Tellurium, Indium, p-Type, Fermi-Level
JOURNAL NAME:
Advances in Materials Physics and Chemistry,
Vol.5 No.4,
April
22,
2015
ABSTRACT: In-doped
(Se0.7Te0.3) thin films (In: 0, 0.05, and 0.08wt%) with
thickness of (150 ± 25 nm) have been
deposited on glass substrates by chemical vapor deposition by using selenium, tellurium and indium whose purity is (99.99%) compound alloy. The electrical and
optical properties of the thin films were analyzed.
The effects of In-doping concentration on the thermoelectric properties
of the thin films were investigated by room-temperature measurement of the See
beck coefficient and electrical resistivity. The thermoelectric power factor
shows the best result at 0.05wt% in doping. The See beck coefficients are
positive with increasing in doping concentration from 0 to 0.08wt%. And the
thin films show p-type conduction. For optical properties, the transmission of
all samples was approximated to 90%.