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N.T. Bagraev, V.A. Mashkov, “A mechanism for two-electron capture at deep level defects in semiconduc-tors, Solid State Communications”, Solid State Commu-nications, Vol. 65, No12, 1988, pp. 1111-1117.

has been cited by the following article:

• TITLE: EDESR and ODMR of Impurity Centers in Nanostructures Inserted in Silicon Microcavities

  AUTHORS: Nikolay T Bagraev, Vladimir A. Mashkov, Edward Yu Danilovsky, Wolfgang Gehlhoff, Dmitrii S. Gets, Leonid E Klyachkin, Andrei A Kudryavtsev, Roman V. Kuzmin, Anna M Malyarenko, Vladimir V Romanov

  KEYWORDS: Silicon Microcavity, Quantum Well, ESR, Bound Exciton, Trigonal Centers, Single Centers, Carbon, ODMR

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.6, July 1, 2011

  ABSTRACT: We present the first findings of the new electrically- and optically-detected magnetic resonance technique [ED electron spin resonance (EDESR) and (ODMR)] which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without the application of the external cavity as well as a high frequency source and recorder, with measuring the only magnetoresistance (EDESR) and transmission (ODMR) spectra within frameworks of the excitonic normal-mode coupling (NMC) caused by the microcavities embedded in the Si-QW plane. The new resonant positive magnetoresistance data are interpreted here in terms of the interference transition in the diffusive transport of free holes respectively between the weak antilocalization regime in the region far from the ESR of a paramagnetic point defect located inside or near the conductive channel and the weak localization regime in the nearest region of the ESR of that defect.