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Kamal, M. and El-Ashram, T. (2008) Zero and Negative Temperature Coefficients of Resistivity of Rapidly Solidified Bi-Sn Alloys Using Melt-Spinning Technique. Journal of Materials Science: Materials in Electronics, 19, 91-96.
http://dx.doi.org/10.1007/s10854-007-9315-4

has been cited by the following article:

• TITLE: The Role of Silver Additions in Formation of Sn-Bi-Ag Semiconductor Alloys by Rapid Solidification

  AUTHORS: Tarek El Ashram

  KEYWORDS: Rapid Solidification, Semiconductor, Energy gap, Resistivity, Sn-Bi-Ag Alloys

  JOURNAL NAME: Materials Sciences and Applications, Vol.6 No.3, March 10, 2015

  ABSTRACT: Five alloys Sn-5Bi-xAg (x = 0, 1, 2, 3, and 4 in at %) are produced by rapid solidification using melt-spinning technique. From temperature dependence of electrical resistivity (TDR), it is found that the Sn-5Bi-xAg (x = 1, 2, 3, 4 in at %) rapidly solidified by melt spinning technique are narrow band semiconductor alloys. The energy gap Eg decreases by increasing Ag concentration from 203 meV for Sn-5Bi-1Ag to 97.5 meV for Sn-5Bi-4Ag alloy. From x-ray diffraction analysis (XRD), it is found that the Hume-Rothery condition for phase stability is not satisfied for this alloy.