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Kawashima, T., Sasaki, Y., Miura, K., Hashimoto, N., Baba, A., Ohkubo, H., Ohtera, Y., Sato, T., Ishikawa, W., Aoyama, T. and Kawakami, S. (2004) Development of Autocloned Photonic Crystal Devices. IEICE Transactions on Electronics, E87-C, 283-290.

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• TITLE: Effects of Si-Layer-Thickness Ratio on UV-Light-Emission Intensity from Si/SiO2 Multilayered Thin Films Prepared Using Radio-Frequency Sputtering

  AUTHORS: Kenta Miura, Hitomi Hoshino, Masashi Honmi, Osamu Hanaizumi

  KEYWORDS: Si, SiO2, Multilayer, Sputtering, UV-Light Emission

  JOURNAL NAME: Materials Sciences and Applications, Vol.6 No.3, March 3, 2015

  ABSTRACT: We investigated the effects of Si-layer-thickness ratios on ultraviolet (UV) peak intensities of Si/ SiO2 multilayered films produced by alternately stacking several-nanometer-thick Si and SiO2 layers using radio-frequency sputtering for the first time. The Si-layer-thickness ratio of the Si/SiO2 film is a very important parameter for enhancing the peak intensity because the ratio is concerned with the size of Si nanocrystals in the film, which might affect the intensity of the UV light emission from the film. We prepared seven samples with various estimated Si-layer-thickness ratios, and measured the photoluminescence spectra of the samples after annealing at 1150°C, 1200°C, or 1250°C for 25 min. From our experiments, we estimate that the proper Si-layer-thickness ratio to obtain the strongest UV peaks from the Si/SiO2 multilayered films is around 0.29. Such a UV-lightemitting thin film is expected to be used in future higher-density optical-disk systems.