Article citationsMore>>

Gulyamov, G., Dadamirzaev, M.G. and Boydedaev, S.R. (2000) Emf of Hot Carriers Due to the Modulation of the Surface Potential in a Strong Microwave Field. Semiconductors-St. Petersburg, 34, 572-575.

has been cited by the following article:

• TITLE: Heating of the Electrons and the Rectified Current at the Contacts That Are in an Alternating Electromagnetic Field

  AUTHORS: G. Gulyamov, M. G. Dadamirzaev

  KEYWORDS: Hot Electrons, The Microwave Field, The Open Circuit Voltage, Short Circuit Current, CVC, p-n-Junction

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.5 No.1, February 28, 2015

  ABSTRACT: The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.