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Singh, M.K., Fusegi, G., Kano, K., Bange, J.P., Miura, K. and Hanaizumi, O. (2009) Intense Photoluminescence from Erbium-Doped Tantalum Oxide Thin Films Deposited by Sputtering. IEICE Electronics Express, 6, 1676-1682.
http://dx.doi.org/10.1587/elex.6.1676

has been cited by the following article:

• TITLE: Preparation of Light-Emitting Ytterbium-Doped Tantalum-Oxide Thin Films Using a Simple Co-Sputtering Method

  AUTHORS: Kenta Miura, Kazusa Kano, Yuki Arai, Osamu Hanaizumi

  KEYWORDS: Tantalum Oxide, Ytterbium, Co-Sputtering, Annealing, Photoluminescence

  JOURNAL NAME: Materials Sciences and Applications, Vol.6 No.2, February 15, 2015

  ABSTRACT: Light-emitting ytterbium-doped tantalum-oxide thin films were prepared using a simple co-sputtering method for the first time. Sharp photoluminescence peaks having a wavelength of around 980 nm were observed from films annealed from 700°C to 1000°C for 10 to 40 min. The strongest intensity of the 980-nm peak was obtained from a film deposited using three ytterbium-oxide pellets and annealed at 800°C for 20 min. Such rare-earth doped tantalum-oxide sputtered films can be used as high-refractive-index materials of autocloned photonic crystals that can be applied to novel light-emitting devices, and they will also be used as both anti-reflection and down-conversion layers for realizing high-efficiency silicon solar cells.