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Sánchez-Juárez, A., Tiburcio-Silver, A. and Ortiz, A. (2005) Fabrication of SnS2/SnS Heterojunction Thin Film Diodes by Plasma-Enhanced Chemical Vapor Deposition. Thin Solid Films, 480-481, 452-456.
http://dx.doi.org/10.1016/j.tsf.2004.11.012

has been cited by the following article:

• TITLE: Fabrication of CdS/SnS Heterojunction for Photovoltaic Application

  AUTHORS: Hongnan Li, Shuying Cheng, Jie Zhang, Weihui Huang, Haifang Zhou, Hongjie Jia

  KEYWORDS: SnS Films, Heterojunction, Thermally Vacuum-Evaporation, I-V Curves

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.5 No.1, January 21, 2015

  ABSTRACT: SnS/CdS heterojunction is a promising system for photovoltaic application. SnS thin films were thermally evaporated onto CdS/ITO coated glass substrates. The structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-V curves of the fabricated devices were measured under dark and illuminated conditions, respectively. We discussed the relationship of the thickness and annealing temperature of CdS buffer layers with the performance of SnS/CdS heterojunctions. The optimum thickness and annealing temperature of the CdS buffer layers were 50 nm and 350°C, respectively. The best device had a conversion efficiency of 0.0025%.