TITLE:
Fabrication of CdS/SnS Heterojunction for Photovoltaic Application
AUTHORS:
Hongnan Li, Shuying Cheng, Jie Zhang, Weihui Huang, Haifang Zhou, Hongjie Jia
KEYWORDS:
SnS Films, Heterojunction, Thermally Vacuum-Evaporation, I-V Curves
JOURNAL NAME:
World Journal of Condensed Matter Physics,
Vol.5 No.1,
January
21,
2015
ABSTRACT: SnS/CdS
heterojunction is a promising system for photovoltaic application. SnS thin
films were thermally evaporated onto CdS/ITO coated glass substrates. The
structure of the device was glass/ ITO/CdS/SnS/In/Ag and I-V curves of the
fabricated devices were measured under dark and illuminated conditions,
respectively. We discussed the relationship of the thickness and annealing
temperature of CdS buffer layers with the performance of SnS/CdS
heterojunctions. The optimum thickness and annealing temperature of the CdS
buffer layers were 50 nm and 350°C, respectively. The best device had a
conversion efficiency of 0.0025%.