Article citationsMore>>

Kim, S.G., Roh, T.M., Kim, J., et al. (2003) Behavior of Trench Surface by H2 Annealing for Reliable Trench Gate Oxide. Journal of Crystal Growth, 255, 123-129.
http://dx.doi.org/10.1016/S0022-0248(03)01238-7

has been cited by the following article:

SCIRP Newsletter
Copyright © 2006-2026 Scientific Research Publishing Inc. All Rights Reserved.
Top