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Imhoff, E.A., et al. (2011) High Performance Smoothly Tapered Junction Termination Extensions for High Voltage 4H-SiC Devices. IEEE Transactions on Electron Devices, 58, 3395-3400.
http://dx.doi.org/10.1109/TED.2011.2160948

has been cited by the following article:

• TITLE: High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

  AUTHORS: Pranati Panda, Satya Narayana Padhi, Gana Nath Dash

  KEYWORDS: MITATT, SiC, Terahertz, Tunnelling

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.4 No.4, December 26, 2014

  ABSTRACT: High frequency properties of 4H-SiC double drift region (DDR) Mixed Tunnelling Avalanche Transit Time (MITATT) diodes are studied through computer simulation method. It is interesting to observe that the efficiency of SiC (flat) DDR MITATT diode (16%) is more than 4 times that of Si (flat) DDR MITATT diode (3.59%). In addition, a power output of more than 15 times from the SiC MITATT diode compared to the Si MITATT diode is commendable. A reduced noise measure of 17.71 dB from a low-high-low (lo-hi-lo) structure compared to that of 21.5 dB from a flat structure of SiC is indicative of the favourable effect of tunnelling current on the MITATT diode performance.