TITLE:
Deep Level Transient Spectroscopy of AlGaInP LEDs
AUTHORS:
M. Atiq, Nazir A. Naz, Akbar Ali
KEYWORDS:
Semiconductors, MOCVD, Defects, DLTS
JOURNAL NAME:
Journal of Modern Physics,
Vol.5 No.18,
December
25,
2014
ABSTRACT: Deep level transient spectroscopy (temperature scans) of AlGaInP based
red light emitting diodes was carried out from 77 K to room temperature. At least ten defects were
observed. Of these, five defects assigned to energy states 0.21, 0.22, 0.24, 0.26,
and 0.24 eV were characterized. Respective capture cross-sections, measured at
infinite temperature (T = ∞), QUOTE were found to be 8.84 × 10-16,
6.98 × 10-16, 7.86 × 10-16, 9.9 × 10-16 and
2.1 × 10-16 cm2. Corresponding concentrations of defects
were 3.7 × 1013, 3.5 × 1013, 3.2 × 1013, 3.3 ×
1013 and 3.1 × 1013 cm-3.