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Boubaker, A., Sghaier, N., Souifi, A. and Kalboussi, A. (2010) Simulation and Modeling of the Write/Erase Kinetics and the Retention Time of Single Electron Memory at Room Temperature. Journal of Semiconductor Technology and Science, 10, 143-151.

has been cited by the following article:

• TITLE: Neural Network Based on SET Inverter Structures: Neuro-Inspired Memory

  AUTHORS: Bilel Hafsi, Rabii Elmissaoui, Adel Kalboussi

  KEYWORDS: Single-Electron, Neuron, Synapse, Inverter, Neural Network, Single-Electron Memory, Perceptron, MATLAB, SIMON

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.4 No.4, December 18, 2014

  ABSTRACT: This paper presents a basic block for building large-scale single-electron neural networks. This macro block is completely composed of SET inverter circuits. We present and discuss the basic parts of this device. The full design and simulation results were done using MATLAB and SIMON, which are a single-electron tunnel device and circuit simulator based on a Monte Carlo method. Special measures had to be taken in order to simulate this circuit correctly in SIMON and compare results with those of SPICE simulation done before. Moreover, we study part of the network as a memory cell with the idea of combining the extremely low-power properties of the SET and the compact design.