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Buchholz, D.B., Chang, R.P.H., Song, J.H. and Ketterson, J.B. (2005) Room-Temperature Ferromagnetism in Cu-Doped ZnO Thin Films, Applied Physics Letters 87, 082504 (2005).
http://dx.doi.org/10.1063/1.2032588

has been cited by the following article:

• TITLE: Effect on Defect in N or F-Doped Ferromagnetic Zn1-xCuxO: First-Principles Study

  AUTHORS: Byung-Sub Kang, Kwang-Pyo Chae, Haeng-Ki Lee

  KEYWORDS: The p-Type ZnO: Cu, Carrier Doping, Ferromagnetic, Half-Metallic, First-Principles

  JOURNAL NAME: Materials Sciences and Applications, Vol.5 No.14, December 4, 2014

  ABSTRACT: We investigated the electronic and magnetic properties for O or Zn defect of (Cu, N) or (Cu, F)-co- doped ZnO with the concentration of 2.77% - 8.33% by using the first-principles calculations. The ferromagnetic coupling of Cu atoms in (Cu, N)-codoped ZnO can be attributed to the hole-mediated double-exchange through the strong 2p-3d coupling between Cu and neighboring O (or N) atoms. The ferromagnetism in Cu-doped ZnO is controllable by changing the carrier density. The Cu magnetic moment in low Cu concentration (2.77%) is increased by the N-doping, while for the F-doping it decreases. For two Cu atoms of Zn0.9445Cu0.0555O with O vacancy, the antiferromagnetic state is more energetically favorable than the ferromagnetic state.