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L. K. Pan, Y. K. Ee, C. Q. Sun, G. Q. Yu, Q. Y. Zhang, and B. K. Tay, “Band-gap expansion, core-level shift, and dielectric suppression of porous silicon passivated by plasma fluorination”, J. Vac. Sci. Technol. B, Vol. 22, 2004, pp 583-587.

has been cited by the following article:

• TITLE: Photoluminescence Properties of LaF3-Coated Porous Silicon

  AUTHORS: Sinthia Shabnam Mou, Md. Johurul Islam, Abu Bakar Md Ismail

  KEYWORDS: Porous Silicon, Anodic Etching, Photoluminescence, Surface Coating, Photonics

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.6, June 24, 2011

  ABSTRACT: This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.