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E. D. Thoma, H. Shields, Y. Zhang, B. C. McCollum, R. T. Williams, J. Lumin., “EPR and Luminescence Studies of LaF3 and CeF3 under X-Ray and Laser Irradiation”, Vol. 71, 1997, pp 93 - 104.

has been cited by the following article:

• TITLE: Photoluminescence Properties of LaF3-Coated Porous Silicon

  AUTHORS: Sinthia Shabnam Mou, Md. Johurul Islam, Abu Bakar Md Ismail

  KEYWORDS: Porous Silicon, Anodic Etching, Photoluminescence, Surface Coating, Photonics

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.6, June 24, 2011

  ABSTRACT: This work reports the coating of porous silicon (PS) with LaF3 and its influence on the photoluminescence (PL) property of PS. PS samples, prepared by electrochemical etching in a solution of HF and ethanol, were coated with e-beam evaporated-LaF3 of different thicknesses. It was observed that the thin LaF3 layer on PS led to a good enhancement of PL yield of PS. But with the increasing thickness of LaF3 layer PL intensity of PS was decreasing along with a small blue-shift. It was also observed that all the coated samples showed degradation in PL intensity with time, but annealing could recover and stabilize the degraded PL.