TITLE:
Growth and Fabrication of GaN/InGaN Violet Light Emitting Diode on Patterned Sapphire Substrate
AUTHORS:
Sonachand Adhikari, Saroj Kanta Patra, Ashok Lunia, Sandeep Kumar, Priyavart Parjapat, Bhoopendra Kushwaha, Pawan Kumar, Sumitra Singh, Ashok Chauhan, Kuldip Singh, Suchandan Pal, C. Dhanavantri
KEYWORDS:
LED, GaN/InGaN, PSS
JOURNAL NAME:
Journal of Applied Mathematics and Physics,
Vol.2 No.12,
November
25,
2014
ABSTRACT: GaN/InGaN based violet light emitting
diodes (LEDs), emitting at 430 nm, have been grown on conventional single side
polished (SSP) and patterned sapphire substrates (PSS). Characteristics of the
epitaxial wafers and subsequently fabricated LEDs have been analyzed. The photoluminescence
(PL) peaks have been observed at 428.1 nm 426.1 nm for the epitaxial layers on
SSP and PSS respectively. The PL intensity is 2.9 times higher in the case of
PSS. The electroluminescence (EL) peaks have been observed at 430.78 nm and
430.35 nm for the LEDs on SSP and PSS respectively. The light output from LED
fabricated on the PSS is 2.15 times higher than that of the LED on SSP at a
forward current of 100 mA.