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Khan, M.A., Shur, M.S., et al. (1995) Temperature Activated Conductance in GaN/AlGa Nheterostructure Field Effect Transistors Operating at Temperatures up to 300°C. Applied Physics Letters, 66, 1083-1085.
http://scitation.aip.org/content/aip/journal/apl/66/9/10.1063/1.113579

has been cited by the following article:

• TITLE: Acoustic Polaron in Free-Standing Slabs

  AUTHORS: Junhua Hou, Guangming Si

  KEYWORDS: Free-Standing Slabs, Acoustic Polaron, Self-Trapping

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.4 No.4, November 20, 2014

  ABSTRACT: The ground-state energy and its derivate of the acoustic polaron in free-standing slab are calculated by using the Huybrechts-like variational approach. The criteria for presence of the selftrapping transition of the acoustic polaron in free-standing slabs are determined qualitatively. The critical coupling constant for the discontinuous transition from a quasi-free state to a trapped state of the acoustic polaron in free-standing slabs tends to shift toward the weaker electronphonon coupling with the increasing cutoff wave-vector. Detailed numerical results confirm that the self-trapping transition of holes is expected to occur in the free-standing slabs of wide-bandgap semi-conductors.