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Fortunato, E.M.C., Barquinha, P.M.C., Pimentel, A.C.M.B.G., Gon?alves, A.M.F., Marques, A.J.S., Martins, R.F.P. and Pereira, L.M.N. (2004) Wide-Bandgap High-Mobility ZnO Thin-Film Transistors Produced at Room Temperature. Applied Physics Letters, 85, 2541-2543
http://dx.doi.org/10.1063/1.1790587

has been cited by the following article:

• TITLE: Structural Analysis of ZnO Film Deposited by Means of Metal Organic Decomposition Method

  AUTHORS: Masato Ohmukai, Takuya Nakagawa, Masaru Kamano, Nobutomo Uehara

  KEYWORDS: ZnO Film, MOD Method, Transparent Electrode, X-Ray Analysis

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.2 No.11, November 10, 2014

  ABSTRACT: ZnO films were deposited on glass substrates by means of a metal organic decomposition (MOD) method. We investigated the effect of annealing temperature, time and the number of laminated layers on the film structure on the basis of X-ray diffraction measurements. We found the optimum conditions of the temperature and the time to be 600°C and 40 minutes for the preparation, respectively. In addition, the layer-by-layer forming was not found to degrade the film from viewpoint of X-ray line width.