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Chao, X., Ma, D., Gu, R. and Yang, Z. (2010) Effects of CuO Addition on the Electrical Responses of the Low-Temperature Sintered Pb(Zr_0.52Ti_0.48)O₃-Pb(Mg_1/3Nb_2/3)O₃-Pb(Zn_1/3Nb_2/3)O₃ Ceramics. Journal of Alloys and Compounds, 491, 698-702. http://dx.doi.org/10.1016/j.jallcom.2009.11.048

has been cited by the following article:

• TITLE: Electrical Properties of CuO-Doped PZT-PZN-PMnN Piezoelectric Ceramics Sintered at Low Temperature

  AUTHORS: Phan Dinh Gio, Le Dai Vuong, Ho Thi Thanh Hoa

  KEYWORDS: Crystal Structure, Dielectric, Piezoelectric Constant, Mechanical Quality Factor

  JOURNAL NAME: Journal of Materials Science and Chemical Engineering, Vol.2 No.11, October 30, 2014

  ABSTRACT: The 0.8Pb(Zr0.48Ti0.52)O3-0.125Pb(Zn1/3Nb2/3)O3-0.075Pb(Mn1/3Nb2/3)O3 (PZT-PZN-PMnN) + x wt% CuO piezoelectric ceramics, where x = 0.0, 0.05, 0.075, 0.10, 0.125, 0.150, and 0.175, have been fabricated by the conventional solid-state reaction method and the B-site Oxide mixing technique (BO). The effect of CuO on the sinterability, structure, and electrical properties of PZT-PZN-PMnN ceramics was systematically studied. The CuO addition significantly reduced the sintering temperature of the ceramics from 1150°C to 850°C. Experimental results showed that with the doping of CuO, all the ceramics could be well sintered and exhibit a dense, pure perovskite structure. The specimen containing 0.125 wt% CuO sintered at 850°C showed the good electrical properties: the density of 7.91 g/cm3; the electromechanical coupling factor, kp = 0.55 and kt = 0.46; the dielectric constant, ε = 1179; the dielectric loss (tand) of 0.006; the mechanical quality factor (Qm) of 1174; the piezoelectric constant (d31) of 112 pC/N.