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Tishkovskii, E.G., Obodnikov, V.I., Taskin, A.A., Feklistov, V. and Seryapin, V.G. (2000) Redistribution of Phosphorus Implanted into Silicon Doped Heavily with Boron. Semiconductors, 34, 629-633.
http://dx.doi.org/10.1134/1.1188043

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