TITLE:
Threshold Characteristics Enhancement of a Single Mode 1.55 µm InGaAsP Photonic Crystal VCSEL for Optical Communication Systems
AUTHORS:
Abbas Majdabadi, Saeid Marjani, Masoud Sabaghi
KEYWORDS:
Threshold Characteristics, Single Mode, VCSEL, Optical Communication Systems
JOURNAL NAME:
Optics and Photonics Journal,
Vol.4 No.10,
October
23,
2014
ABSTRACT: In the
present work, we investigate threshold characteristics of a single mode 1.55 μm
InGaAsP vertical cavity surface emitting laser (VCSEL) with two different
optical confinement structures. The device employs InGaAsP active region, which
is sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors
(DBRs). The optical confinement introduced by the oxide aperture or a single
defect photonic crystal design with holes etched throughout the whole
structure, is compared with previous work. Photonic crystal VCSEL shows 30.86%
and 57.02% lower threshold current than that of the similar oxide confined
VCSEL and previous results, respectively. This paper provides key results of
the threshold characteristics, including the threshold current and the
threshold power. Results suggest that, the 1.55 μm InGaAsP photonic crystal
VCSEL seems to be the most optimal one for light sources in high performance
optical communication systems.