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Lim, J.H., Hwang, D.K., Kim, H.S., Oh, J.Y., Yang, J.H., Navamathavan, R. and Park, S.J. (2004) Low-Resistivity and Transparent Indium-Oxide-Doped ZnO Ohmic Contact to p-Type GaN. Applied Physics Letters, 85, 6191.
http://dx.doi.org/10.1063/1.1826231

has been cited by the following article:

• TITLE: Sol-Gel Processed Indium-Doped Zinc Oxide Thin Films and Their Electrical and Optical Properties

  AUTHORS: Radhouane Bel-Hadj-Tahar, Abdellatif Belhadj Mohamed

  KEYWORDS: Zinc Oxide, Doping, Electro-Optical Properties, Sol-Gel

  JOURNAL NAME: New Journal of Glass and Ceramics, Vol.4 No.4, October 17, 2014

  ABSTRACT: Transparent conducting films of zinc oxide and indium-doped zinc oxide have been prepared by a simple and economical sol-gel technique. This process is feasible for the fabrication of high quality TCO thin films when the processing parameters are optimized. It was found that the out-diffusion of oxygen during the vacuum annealing step was a crucial factor to prepare thin layer with superior properties. Annealing lowers the resistivity down to 4.7 10-3Ω·cm for the 1 at.% doped films due to the liberation of high-valency In-dopants and the enhanced film density. At high indium concentrations, the free electron density stabilizes because an increasing number of dopant atoms form some kinds of neutral defects. The neutralized indium atoms do not contribute free electrons. The feasibility to deposit highly transparent ZnO thin films has been demonstrated.