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Chen, H.-L., Hsu, J.-C., Wang, P.W., Lin, Y.-H., Wu, K.-T. and Liu, C.-R. (2009) AlF3 Film Deposited by IAD with End-Hall Ion Source Using SF6 as Working Gas. Applied Surface Science, 256, 1232-1235.
http://dx.doi.org/10.1016/j.apsusc.2009.05.138

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