TITLE:
Negative Resistance Region 10 nm Gate Length on FINFET
AUTHORS:
Maryam Nezafat, Omid Zeynali, Daruosh Masti
KEYWORDS:
Multi-Gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), FINFET, Silicon on Insulator, Negative Resistance
JOURNAL NAME:
Journal of Modern Physics,
Vol.5 No.12,
July
25,
2014
ABSTRACT: In this
paper the physical characteristics of FINFET (fin-field effect transistor)
transistor behavior are investigated. For the analysis, semi-classical electron
transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD)
software. Simulations show that the output resistance of FINFET along very
small gate (gate length and fin height of 50 nm) is negative. The negative
resistance is used in oscillators.