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Mil’sthein, S. and Liessner, C. (2006) RF Switch Using Pairs of pHEMTs with Shifted Gates. Patent Application No. 11407381.

has been cited by the following article:

• TITLE: Negative Resistance Region 10 nm Gate Length on FINFET

  AUTHORS: Maryam Nezafat, Omid Zeynali, Daruosh Masti

  KEYWORDS: Multi-Gate MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), FINFET, Silicon on Insulator, Negative Resistance

  JOURNAL NAME: Journal of Modern Physics, Vol.5 No.12, July 25, 2014

  ABSTRACT: In this paper the physical characteristics of FINFET (fin-field effect transistor) transistor behavior are investigated. For the analysis, semi-classical electron transfer method was used based on drift diffusion approximation by TCAD (Tiber CAD) software. Simulations show that the output resistance of FINFET along very small gate (gate length and fin height of 50 nm) is negative. The negative resistance is used in oscillators.