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Britnell, L., Gorbachev, R.V., Jalil, R., Belle, B.D., Shedin, F., Mishchenko, A., Georgiou, T., Katsnelson, M.I., Eaves, L., Morosov, S.V., Peres, N.M.R., Leist, J., Geim, A.K., Novoselov, K.S. and Ponomarenko, L.A. (2012) Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures. Science, 335, 947-950. http://dx.doi.org/10.1126/science.1218461

has been cited by the following article:

• TITLE: Transferring Few-Layer Graphene Sheets on Hexagonal Boron Nitride Substrates for Fabrication of Graphene Devices

  AUTHORS: J. A. Leon, N. C. Mamani, A. Rahim, L. E. Gomez, M. A. P. da Silva, G. M. Gusev

  KEYWORDS: Graphene, Boron Nitride, Transfer Method, Raman Spectroscopy

  JOURNAL NAME: Graphene, Vol.3 No.3, July 24, 2014

  ABSTRACT: We have developed a dry transfer method that allows graphene to be transferred from polymer- thyl-methacrylate (PMMA)/Si (silicon) substrates on commercially available hexagonal boron ni- tride (hBN) crystals. With this method we are able to fabricate graphene devices with little wrin- kles and bubbles in graphene sheets, but that do not degrade the electronic quality more than the SiO2 substrate does. For hBN to perform the function described above substrate cleanliness is critical to get high quality graphene devices. Using hBN as a substrate, graphene exhibits enhanced mobility, reduced carrier inhomogeneity, and reduced intrinsic doping compared to graphene on SiO2 substrate.