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Bougrov, V., Levinshtein, M.E., Rumyantsev, S.L. and Zubrilov, A. (2001) Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe. In: Levinshtein, M.E., Rumyantsev, S.L. and Shur M.S., Eds., John Wiley & Sons, Inc., New York, 1-30.

has been cited by the following article:

• TITLE: Numerical Simulations of Nonlinear Interaction of Space Charge Waves in Microwave and Millimeter Wave Range in n-InN Films Using Negative Differential Conductivity

  AUTHORS: Abel Garcia-Barrientos, Volodymyr Grimalsky

  KEYWORDS: Space Charge Waves, InN Film, Negative Differential Conductivity

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.4 No.3, July 18, 2014

  ABSTRACT: Numerical simulations of nonlinear interaction of space charge waves in microwave and millimeter wave range in n-InN films have been carried out. A micro- and millimeter-waves frequency conversion using the negative differential conductivity phenomenon is carried out when the harmonics of the input signal are generated. An increment in the amplification is observed in n-InN films at essentially at high-frequencies f