Article citationsMore>>

K. Flachbart, V. Pavlнk, N. Toma?ovi?ová, C. J. Adkins, M. So-mora, J. Leib and G. Eska, “Conduction Mechanism in RuO2-Based Thick Films,” Physica Status Solidi (B), 205, No. 1, January 1998, pp. 399-404. doi:10.1002/(SICI)1521-3951(199801)205:1<399::AID-PSSB399>3.0.CO;2-X

has been cited by the following article:

• TITLE: On the Conduction Mechanism of Silicate Glass Doped by Oxide Compounds of Ruthenium (Thick Film Resistors)

  AUTHORS: Gulmurza Abdurakhmanov

  KEYWORDS: Lead-Silicate Glass, Thick Film Resistors, Percolation Levels, Doping, Conductivity, Firing Conditions

  JOURNAL NAME: World Journal of Condensed Matter Physics, Vol.1 No.2, May 6, 2011

  ABSTRACT: The results of the investigation of conduction mechanism of silicate glass doped by oxide compounds of ruthenium (thick film resistor) are reported. The formation of diffusion zones in the softened glass during firing process of the mixture of the glass and the dopant powders is considered. As the result the doping glass becomes conductive. These diffusion zones have higher conductivity and act as percolation levels for the free charge carriers. The effect of tem-perature and duration of firing process on the conductivity of doped glass is considered. Experimental results are in a good agreement with the model.