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L. Valentini, L. Lozzi, V. Salerni, I. Armentano, J. M. Kenny and S. Santucci, “Effect of Thermal Annealing on the Electronic Properties of Nitrogen Doped Amorphous Carbon/p-type Crystalline Silicon Heterojunction Diodes,” Journal of Vacuum Science and Technology A, Vol. 21, No. 3, 2003, pp. 582-588. doi:10.1116/1.1562477

has been cited by the following article:

• TITLE: Pulsed Supermagnetron Plasma CVD of a-CNx:H Electron-Transport Films for Au/a-CNx:H/p-Si Photovoltaic Cells

  AUTHORS: Haruhisa Kinoshita, Hiroyuki Suzuki

  KEYWORDS: a-CNx:H film, Supermagnetron Plasma, Pulsed Plasma, CVD, Photovoltaic Cell

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.5, May 17, 2011

  ABSTRACT: Hydrogenated amorphous carbon nitride (a-CNx:H) films were formed on p-Si wafers set on a lower elec-trode by pulsed supermagnetron plasma CVD using i-C4H10 and N2 gases. Lower electrode RF power (LORF) of 13.56 MHz (50 - 800 W) was modulated by a 2.5-kHz pulse at a duty ratio of 12.5%, and upper electrode RF power (UPRF) of 50 - 400 W was supplied continuously. The optical band gap decreased with an increase in LORF at each UPRF. The open circuit voltage of Au/a-CNx:H/p-Si photovoltaic cells (a-CNx:H film thickness: 25 nm) was about 200 mV for each cell, and the short circuit current density and energy conversion efficiency increased with LORF for each UPRF. The highest energy conversion efficiency of 0.81% was obtained at UPRF/LORF of 200/800 W.