TITLE:
Formation Processes of Zinc Excimer Thin Films Due to Ion-Recombination Processes
AUTHORS:
Li Chen, Shinichiro Yamashita, Mitsugi Hamasaki, Hirotaka Manaka, Kozo Obara
KEYWORDS:
Zinc Excimer, Ion-Recombination, Zn3d8, Charge Transfer, XPS
JOURNAL NAME:
Journal of Applied Mathematics and Physics,
Vol.2 No.7,
June
13,
2014
ABSTRACT: In materials science, the number of d-electrons of transition
metals is an essentially important factor controlling characteristics of alloys
and compounds. In this paper, we show an example to control the number of
d-electrons (holes) by using inner-core electron excitation of zinc atoms. An
important feature of our research is that we can make a long lifetime excited
electronic state of zinc (3d8), and the life-time of excited zinc is
more than 307 days. At first, the experimental apparatus and boundary
conditions of the ion-recombination processes were explained. From results of
XPS, excited zinc films showed satellites peaks what caused by the final state
of 3d8 and the charge transfer final state of 3d10L2.
Excited states of zinc were formatted at the surface of substrate caused by
ion-recombination process between Zn+ and Zn-.
The excited zinc diffused from substrate surface to the surface of the excited
zinc thin film. Intensity of excited zinc is proportional to the intensity of
electron on the substrate.