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J. Cheon, J. E. Gozum and G.S. Girolami, “Chemical Vapour Deposition of MoS2 and TiS2 Films from the Metal-Organic Precursors Mo(S-t-Bu)4 and Ti(S-t-Bu)4,” Chemical Materials, Vol. 9, No. 8, 1997, pp. 1847-1853. doi:10.1021/cm970138p

has been cited by the following article:

• TITLE: MOCVD of Molybdenum Sulphide Thin Film Via Single Solid Source Precursor Bis-(Morpholinodithioato-s,s’)-Mo

  AUTHORS: Bolutife Olofinjana, Gabriel Egharevba, Bidini Taleatu, Olumide Akinwunmi, Ezekiel Oladele Ajayi

  KEYWORDS: Molybdenum Sulphide, Precursor, Metal Organic Chemical Vapour Deposition (MOCVD), Thin Film, Characterization

  JOURNAL NAME: Journal of Modern Physics, Vol.2 No.5, May 17, 2011

  ABSTRACT: A single solid source precursor bis-(morpholinodithioato-s,s’)-Mo was prepared and molybdenum sulphide thin film was deposited on sodalime glass using Metal Organic Chemical Vapour Deposition (MOCVD) technique at deposition temperature of 420?C. The film was characterized using Rutherford Backscattering Spectroscopy (RBS), Ultraviolet-Visible Spectroscopy, Four point probe technique, Scanning Electron Mi-croscopy (SEM), X-ray Diffractometry (XRD) and Atomic Force Microscopy (AFM). A direct optical band gap of 1.77 eV was obtained from the analysis of the absorption spectrum. The sheet resistance was found to be of the order of 10P–5P ΩP–1P?cmP–1P. SEM micrographs of the films showed the layered structure of the film with an estimated grain size that is less than 2 µm while XRD indicates parallel orientation of the basal plane to the substrate surface.