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Kayastha, M.S., Matsunami, I., Sapkota, D.P., Takahashi, M. and Wakita, K. (2009) Ultrahigh-Purity Undoped GaAs Epitaxial Layers Prepared by Liquid Phase Epitaxy. Japanese Journal of Applied Physics, 48, 121102-121106.
http://dx.doi.org/10.1143/JJAP.48.121102

has been cited by the following article:

• TITLE: Proposed Model of Electric Field Effects in High-Purity GaAs at Room Temperature

  AUTHORS: Durga Prasad Sapkota, Madhu Sudan Kayastha, Makoto Takahashi, Koichi Wakita

  KEYWORDS: Optoelectronics, Electroabsorption, Modulator

  JOURNAL NAME: Optics and Photonics Journal, Vol.4 No.5, May 30, 2014

  ABSTRACT: We have proposed a new model for the calculation of excitonic electroabsorption based on modified previously reported models for bulk structure. The excitonic absorption spectra in high purity GaAs have been theoretically studied in the presence of electric field at room temperature (RT). The Stark shift, linewidth broadening of exciton and extinction ratio have been calculated as a function of electric field. For the validity of our model we have compared with experimental result.