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Krajewskia, T.A., Luka, G., Smertenko, P.S., Zakrzewski, A.J., Dybkoa, K., Jakiela, R., Wachnicki, L., Gieraltowska, S., Witkowskia, B.S., Godlewski, M. and Guziewicza, E. (2011) Schottky Junctions Based on The ALD-ZnO Thin Films for Electronic Applications. Acta Physica Polonica A, 120, 19-23.

has been cited by the following article:

• TITLE: Influence of Sn Low Doping on the Morphological, Structural and Optical Properties of ZnO Films Deposited by Sol Gel Dip-Coating

  AUTHORS: Chewki Zegadi, Khalil Abdelkebir, Denis Chaumont, Mohamed Adnane, Saad Hamzaoui

  KEYWORDS: Sol-Gel Dip-Coating, ZnO Films, Sn Low Doping, SEM Micrographs, X-Rays Patterns, Optical Properties, XPS Spectrum

  JOURNAL NAME: Advances in Materials Physics and Chemistry, Vol.4 No.5, May 30, 2014

  ABSTRACT: In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. The Scanning Electron Microscopy (SEM) showed that the morphological surface of the films was affected by Sn low doping. The X-Ray Diffraction (XRD) patterns showed that all films have polycrystalline structures, and the doping incorporation has not lead to substantial changes in the structural characteristics of ZnO films. The crystallite size was calculated using the well-known Scherrer’s formula and found to be in the range of 23 - 40 nm. The measurements from UV-Visible Spectrophotometer (U-Vis) indicated that the highest average optical transmittance in the visible region was related to Undoped ZnO film, then the optical band gap and Urbach energy values of thin films were calculated. The X-Ray Photoelectron Spectroscopy (XPS) has demonstrated that Sn is incorporated in ZnO lattice.