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N. Bachir, A. Hamdoune, B. Bouazza and N. E. Chabane- Sari, “The Study of the Phe-nomenon of Transport in the cubic Gallium Nitride and Alu-minium Nitride and Indium Nitride by the Monte Carlo Method of Simulation,” Inter- national Review of Physics, Vol. 4, No. 1, 2010, pp. 35-38.

has been cited by the following article:

• TITLE: Electronic Transport Study of ZnTe and ZnSe

  AUTHORS: Siham Khedim, Nasr-Eddine Chabane Sari, Boumediene Benyoucef, Benyounes Bouazza

  KEYWORDS: Transport Properties, Monte Carlo Method, Three Valley Model, Semiconductor Materials

  JOURNAL NAME: Materials Sciences and Applications, Vol.2 No.5, May 5, 2011

  ABSTRACT: The transport properties of electrons in ZnTe and ZnSe are of great interest because of their numerous technological applications. This paper investigates several calculation results of Monte Carlo device simulation. The average quantities directly accessible by the simulation are the drift velocity, the carriers’ energy and diffusion. The method we choosed to study the transport phenomena uses a three valley model (Γ, L, X) non-parabolic. The results have been obtained by applying the electric field in the direction . Finally we compared our results with those obtained previously.