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Kumar, P., Lemmens, P., Ghosh, M., Ludwi, F. and Schilling, M. (2009) Effect of HF Concentration on Physical and Electronic Properties of Electrochemically Formed Nanoporous Silicon. Journal of Nanomaterials, 18, Article ID: 727957, 7.

has been cited by the following article:

• TITLE: Structural Characteristics of Porous Silicon

  AUTHORS: Qadeer Hussain, Arifullah  , Nazir A. Naz, Ammar Akbar, Akbar Ali

  KEYWORDS: PS, XRD, Electron Confinement

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.4 No.2, April 29, 2014

  ABSTRACT: Silicon wafers (p-type) were etched under continuous flow of HF vapors in a reaction chamber at standard temperature and pressure. Etched surface of the silicon wafer was found emitting red luminescence when exposed to ultra violet (UV) light. XRD and Atomic Force Microscopy of the etched samples were carried out to study the surface of the etched silicon. It is noticed that etching has removed the stress induced atomic layers of silicon at grain boundaries and layer of porous silicon has been formed at the surface of silicon wafer which has higher inter planer distance than the silicon itself. The size of dots observed on the surface of etched silicon is of the order of few nm. The red emission from the surface of etched silicon appears to be due to the energy states induced by quantum confinement.