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Niwano, M., Kondo, Y. and Kimira Y. (2000) In Situ Infrared Observation of Etching and Oxidation Processes on Si Surfaces in NH4F Solution. Journal of the Electrochemical Society, 147, 1555-1559.
http://dx.doi.org/10.1149/1.1393393

has been cited by the following article:

• TITLE: In Situ ATR-FTIR Observation about Surfactant/Hydrogen-TerminatedSi(111) Interface in Solution

  AUTHORS: Toshihito Ohtake

  KEYWORDS: ATR-FTIR, Si, Hydrogen Termination, Surfactant

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.4 No.2, April 16, 2014

  ABSTRACT: Development of novel functional devices has been expected by modification for Si surface. This study investigated immobilization and roles of the Si surface with flowing surfactant by in situ ATR-FTIR method. This result suggested that the surfactant prevented oxidation of the hydrogen-terminated Si surface from the higher concentration in aqueous solution. These would guard the Si surface against H2O molecules.