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Jakob, P., Chabal, Y.J., Raghavachari, K., Becker, R.S. and Becker, A.J. (1992) Kinetic Model of the Chemical Etching of Si(111) Surfaces by Buffered HF Solutions. Surface Science, 275, 407-413.
http://dx.doi.org/10.1016/0039-6028(92)90813-L

has been cited by the following article:

• TITLE: In Situ ATR-FTIR Observation about Surfactant/Hydrogen-TerminatedSi(111) Interface in Solution

  AUTHORS: Toshihito Ohtake

  KEYWORDS: ATR-FTIR, Si, Hydrogen Termination, Surfactant

  JOURNAL NAME: Journal of Surface Engineered Materials and Advanced Technology, Vol.4 No.2, April 16, 2014

  ABSTRACT: Development of novel functional devices has been expected by modification for Si surface. This study investigated immobilization and roles of the Si surface with flowing surfactant by in situ ATR-FTIR method. This result suggested that the surfactant prevented oxidation of the hydrogen-terminated Si surface from the higher concentration in aqueous solution. These would guard the Si surface against H2O molecules.