TITLE:
Transport Properties of AgInSe2 Crystals
AUTHORS:
Hamdy T. Shaban, Melaad K. Gergs
KEYWORDS:
Semiconductors, Crystal Growth, X-Ray Diffraction, Transport Properties
JOURNAL NAME:
Materials Sciences and Applications,
Vol.5 No.5,
April
15,
2014
ABSTRACT: AgInSe2 crystals were grown by Bridgman technique. The crystals were identified structurally by X-ray diffraction technique. Measurements of electrical conductivity and Hall effect were performed in the temperature range (138 K - 434 K) and (220 K - 488 K) for thermoelectric power measurements. From these measurements, many physical parameters were determined. The energy gap was calculated to be 1.24 eV. The conductivity type was found to be n-type. Crystallite size (D) of the obtained AgInSe2 crystals was calculated to be 70 nm. The lattice parameters for the prepared crystals were a = 6.0938 ? and c = 11.7775 ?.