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B. Weng, F. Zhao, J. Ma, G. Yu, J. Xu and Z. Shi, “Elimination of Threading Dislocations in As-Grown PbSe Film on Patterned Si(111) Substrate Using Molecular Beam Epitaxy,” Applied Physics Letters, Vol. 96, 2010, Article ID: 251911. http://dx.doi.org/10.1063/1.3457863

has been cited by the following article:

• TITLE: Theoretical D* Optimization of N+-p Pb1-xSnxSe Long-Wavelength (8 - 11 μm) Photovoltaic Detector at 77 K

  AUTHORS: Binbin Weng, Jijun Qiu, Lihua Zhao, Caleb Chang, Zhisheng Shi

  KEYWORDS: Pb1-xSnxSe; Lifetime; Resistant-Area Product; Quantum Efficiency; Detectivity

  JOURNAL NAME: Detection, Vol.2 No.1, March 28, 2014

  ABSTRACT: In this work, the study of the influences of lifetime, doping concentration and absorption layer thickness to resistant- area product (R0A) and quantum efficiency of Pb1-xSnxSe photovoltaic detector are presented. Three fundamental current mechanisms including diffusion, generation-recombination, and tunneling models are considered. Using optimal doping concentration and absorption layer thickness parameters, the calculated detectivity (D*) of Pb1-xSnxSe photovoltaic detector is over 1012 cm Hz1/2/W.