TITLE:
Theoretical Study of Electronic Transmission in Resonant Tunneling Diodes Based on GaAs/AlGaAs Double Barriers under Bias Voltage
AUTHORS:
Shaffa Abdullah Almansour, Dakhlaoui Hassen
KEYWORDS:
GaAs Semiconductor; Resonant Tunneling Diode; Current-Density
JOURNAL NAME:
Optics and Photonics Journal,
Vol.4 No.3,
March
27,
2014
ABSTRACT: In this
paper, we theoretically study the quantum size effects on the electronic
transmission and current density of the electrons in GaAs/AlGaAs resonant
tunneling diodes by solving the coupled equations Schrodinger-Poisson
self-consistently. It is found that the resonant peaks of the trans-mission
coefficients shift towards the lower energy regions as the applied bias voltage
increases. Our results indicate that the transmission coefficient depends
strongly on the variation of the thickness of collector and emitter. We also
study the effect of the doping concentration located in the emitter and
collector regions on the transmission and current density. We found that the
dop-ing concentration can greatly affect the transmission coefficient and the
current density; in partic-ular it increases the peak of the current density
and displaces the position of the maxima of the current dependence on the
applied bias voltage.