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Wu, W.-F., Ou, K.-L., Chou, C.-P. and Hsu, J.-L. (2003) PECVD - Ti/TiNx Barrier with Multilayered Amorphous Structure and High Thermal Stability for Copper Metallization. Electrochemistry Solid State Letter, 6, G27-G29.

has been cited by the following article:

• TITLE: Deposition of Titanium Layer on Steel Substrate Using PECVD Method: A Parametric Study

  AUTHORS: Haman Hedaiatmofidi, Alireza Sabour Rouh Aghdam, Shahrokh Ahangarani, Mansour Bozorg, Mahboube Azadi, Maryam Valiei

  KEYWORDS: PECVD; Titanium Layer; Oxygen Content; XPS

  JOURNAL NAME: Materials Sciences and Applications, Vol.5 No.3, March 17, 2014

  ABSTRACT: Metallic titanium film was deposited on H-13 steel substrate at 470°C - 530°C using plasma enhanced chemical vapor deposition (PECVD) method. In this paper, the effects of manufacturing parameters were investigated on deposited titanium coating characteristics. XRD, FESEM, XPS and AFM were used in order to study coating characteristics. Increasing hydrogen flow rate from 200 to 360 sccm, resulted in a 72% decrease in oxygen content and 38% decrease in chlorine content of the film. Applied plasma voltage has a severe effect on nanohardness of coating. Pressure of the deposition chamber has a negative effect on titanium characteristics.