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Dinc, T., et al. (2013) Building Blocks for an X-Band SiGe BiCMOS T/R Module. IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR), Austin, 20-23 January 2013, 97-99.

has been cited by the following article:

• TITLE: An X-Band Low Noise Amplifier Design for Marine Navigation Radars

  AUTHORS: Christina Lessi, Evangelia Karagianni

  KEYWORDS: Navy RADAR; Low Noise Amplifier (LNA); Field Effect Transistor (FET)

  JOURNAL NAME: International Journal of Communications, Network and System Sciences, Vol.7 No.3, March 13, 2014

  ABSTRACT: In this paper, the design of a 9.1 GHz Low Noise Amplifier (LNA) of a RADAR receiver that is used in the Navy is presented. For the design of the LNA, we used GaAs Field-Effect Transistors (FETs) from Agilent ADS component library. In order to keep the cost of the circuit in low prices and the performance high, we design a two-stage LNA.