Snowden, C.M. and Miles, R.E. (1993) Compound Semiconductor Device Modeling, Springer, New York.http://dx.doi.org/10.1007/978-1-4471-2048-3
has been cited by the following article:
TITLE: Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors
AUTHORS: Salih Saygi
KEYWORDS: HEMT; Semiconductors; Electron Density; Energy Density; Binomial Coefficient
JOURNAL NAME: Open Journal of Applied Sciences, Vol.4 No.3, March 11, 2014
ABSTRACT: In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of hetero-junction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.