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Khan, M.A., Hu, X., Simin, G., Lunev, A., Yang, J., Gaska, R. and Shur, M.S. (2000) AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor. IEEE Electron Device Letter, 21, 2.
http://dx.doi.org/10.1109/55.821668

has been cited by the following article:

• TITLE: Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors

  AUTHORS: Salih Saygi

  KEYWORDS: HEMT; Semiconductors; Electron Density; Energy Density; Binomial Coefficient

  JOURNAL NAME: Open Journal of Applied Sciences, Vol.4 No.3, March 11, 2014

  ABSTRACT: In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of hetero-junction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.