Article citationsMore>>

Khan, M.A., Chen, Q., Yang, J.W., Shur, M., Dermott, B.T. and Higgins, J.A. (1996) Microwave Operation of GaN/ AlGaN-Doped Channel Heterostructure Field Effect Transistors. IEEE Electron Device Letters, 17, 1.
http://dx.doi.org/10.1109/55.506356

has been cited by the following article:

• TITLE: Analytical Evaluation of Energy and Electron Concentrations in Quantum Wells of the High Electron Mobility Transistors

  AUTHORS: Salih Saygi

  KEYWORDS: HEMT; Semiconductors; Electron Density; Energy Density; Binomial Coefficient

  JOURNAL NAME: Open Journal of Applied Sciences, Vol.4 No.3, March 11, 2014

  ABSTRACT: In this letter we propose analytical evaluation method for the electron density and the energy density in multi-layered high electron mobility transistors (HEMTs). The algorithm is used to simulate the variation of the electron density and the energy density against temperature of hetero-junction AlGaN/GaN. The proposed procedure guaranties the reliable application of the contribution of multi-layered HEMTs structure. In conclusion, the obtained results are estimated and discussed.