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Chen, X.Y., Lu, Y.F., Tang, L.J., Wu, Y.H., Cho, B.J., Xu, X.J., Dong, J.R. and Song, W.D. (2005) Annealing and Oxidation of Silicon Oxide Films Prepared by Plasma-Enhanced Chemical Vapor Deposition. Journal of Applied Physics, 97, Article ID: 014913.
http://dx.doi.org/10.1063/1.1829789

has been cited by the following article:

• TITLE: Role of Chromium Intermediate Thin-Film on the Growth of Silicon Oxide (SiOx) Nanowires

  AUTHORS: Anima Johari, Anoopshi Johari, Vikas Rana, M. C. Bhatnagar

  KEYWORDS: SiOx Nanowires; Catalyst Assisted Growth; Gold; Chromium; Thermal Annealing

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.4 No.1, February 27, 2014

  ABSTRACT: In the present work, one-dimensional nanostructures of silicon oxide (SiOx) have been synthesized by thermal annealing method with and without chromium thin film on silicon substrate. The synthesis was carried out at different process temperatures ranging from 1000°C to 1100°C by using gold/chromium (Au/Cr) catalysts stack layer on the Si substrate in nitrogen (N2) ambience. The as-synthesized SiOx nanostructures have tetragonal rutile structure and show polycrystalline nature. The SEM images reveal wire-like nanostructures on the substrate with and without chromium thin film. Under the catalytic reaction of the gold/chromium metal, the density of SiOx nanowires is enhanced, since the Cr layer serves as a diffusion barrier for the diffusion of the gold downwards into the Si substrate. The vapor-liquid solid (VLS) growth mechanism is found to be dominant in the growth of SiOx nanowires. Furthermore, X-Ray diffraction microscopy (XRD) and Photoluminescence spectroscopy (PL) analysis conclude the defect free growth of the SiOx nanowires on gold/chrome/silicon substrate.