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M. Valentinova, “Memory and Electronic Semiconductor Elements,” Science, Technology, Business, Vol. 5, No. 10, 2003, pp. 10-15.

has been cited by the following article:

• TITLE: Synthesis of Ag/Ag2S Nanoclusters Resistive Switches for Memory Cells

  AUTHORS: Aleksey Nikolaevich Belov, Olga Veniaminovna Pyatilova, Maksim Igorevich Vorobiev

  KEYWORDS: Silver Sulphide Clusters; Memory Cells; Sulphidation; Deal-Grove Model

  JOURNAL NAME: Advances in Nanoparticles, Vol.3 No.1, February 10, 2014

  ABSTRACT: Resistive switching Ag/Ag2S nanoclusters were formed by sulphidation of melting-dispersed thin and continuous Ag films. The morphology, structure and electrical properties of the prepared clusters were characterized by scanning (SEM), transmitting electron (TEM), scanning resistance microscopes (SRM) and Raman scattering. Hysteretic resistive switching behavior was observed in the samples that were studied with ON/OFF switching voltage equal to 8 - 10 V respectively. Simple empirical numerical simulation model, based on Deal-Grove model assumptions and mechanisms, for silver nanoclusters sulphidation process, was proposed.