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R. P. Schmid, D. Mankovics, T. Arguirov, M. Ratzke, T. Mchedlidze and M. Kittler, “Rapid Dislocation-Related D1-Photoluminescence Imaging of Multicrystalline Si Wafers at Room Temperature,” Physica Status Solidi A, Vol. 208, No. 4, 2011, pp. 888-892. http://dx.doi.org/10.1002/pssa.201026269

has been cited by the following article:

• TITLE: Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy

  AUTHORS: Dominik Lausch, Christian Hagendorf

  KEYWORDS: Defect Luminescence; Recombination Active Defects; Silicon Solar Cells; Optical Microscopy

  JOURNAL NAME: Microscopy Research, Vol.2 No.1, January 22, 2014

  ABSTRACT: In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.