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S. Johnston, F. Yan, D. Dorn, K. Zaunbrecher, M. Al- Jassim, O. Sidelkheir and K. Ounadjela, “Comparison of Photoluminescence Imaging on Starting Multi-Crystalline Silicon Wafers to Finished Cell Performance,” 38th IEEE Photovoltaic Specialists Conference, Austin, Piscataway, 3-8 June 2012, pp. 000406-000410.

has been cited by the following article:

• TITLE: Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy

  AUTHORS: Dominik Lausch, Christian Hagendorf

  KEYWORDS: Defect Luminescence; Recombination Active Defects; Silicon Solar Cells; Optical Microscopy

  JOURNAL NAME: Microscopy Research, Vol.2 No.1, January 22, 2014

  ABSTRACT: In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.