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K. Bothe, K. Ramspeck, D. Hinken, C. Schinke, J. Schmidt, S. Herlufsen, R. Brendel, J. Bauer, J.-M. Wagner, N. Zakharov and O. Breitenstein, “Luminescence Emission from Forward- and Reverse-Biased Multicrystalline Sili- con Solar Cells,” Journal of Applied Physics, Vol. 106, No. 10, 2009, Article ID: 104510. http://dx.doi.org/10.1063/1.3256199

has been cited by the following article:

• TITLE: Microscopic Study of Defect Luminescence between 0.72 - 0.85 eV by Optical Microscopy

  AUTHORS: Dominik Lausch, Christian Hagendorf

  KEYWORDS: Defect Luminescence; Recombination Active Defects; Silicon Solar Cells; Optical Microscopy

  JOURNAL NAME: Microscopy Research, Vol.2 No.1, January 22, 2014

  ABSTRACT: In this contribution, an experimental setup to investigate the defect luminescence between 0.72 - 0.85 eV of single defects in Silicon by optical microscopy is introduced. For this purpose, an optical microscope is equipped with an InGaAs CCD detector and a longpass filter with a cut-off wavelength at 1450 nm in order to filter out the band-to-band luminescence at around 1.1 eV. Grain boundaries showing homogeneous distributed defect luminescence can be localized at a μm-scale.